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| PartNumber | IRF6215STRLPBF | IRF6215STRRPBF | IRF6215STRR |
| Description | MOSFET MOSFT PCh -150V -13A 290mOhm 44nC | MOSFET 1 P-CH -150V HEXFET 290mOhms 44nC | MOSFET P-CH 150V 13A D2PAK |
| Manufacturer | Infineon | Infineon | International Rectifier |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-220AB-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 150 V | 150 V | - |
| Id Continuous Drain Current | 13 A | 13 A | - |
| Rds On Drain Source Resistance | 290 mOhms | 290 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 44 nC | 44 nC | - |
| Pd Power Dissipation | 110 W | 110 W | - |
| Configuration | Single | Single | Single |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 800 | 800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SP001563306 | SP001554086 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Channel Mode | - | Enhancement | Enhancement |
| Type | - | HEXFET Power MOSFET | - |
| Forward Transconductance Min | - | 3.6 S | - |
| Fall Time | - | 37 ns | 37 ns |
| Rise Time | - | 36 ns | 36 ns |
| Typical Turn Off Delay Time | - | 53 ns | 53 ns |
| Typical Turn On Delay Time | - | 14 ns | 14 ns |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 110 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | - 13 A |
| Vds Drain Source Breakdown Voltage | - | - | - 150 V |
| Vgs th Gate Source Threshold Voltage | - | - | - 2 V to - 4 V |
| Rds On Drain Source Resistance | - | - | 290 mOhms |
| Qg Gate Charge | - | - | 44 nC |
| Forward Transconductance Min | - | - | 3.6 S |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF6215STRLPBF | MOSFET MOSFT PCh -150V -13A 290mOhm 44nC | |
| IRF6215STRRPBF | MOSFET 1 P-CH -150V HEXFET 290mOhms 44nC | ||
| IRF6215STRR | MOSFET P-CH 150V 13A D2PAK | ||
| IRF6215STRLPBF | Darlington Transistors MOSFET MOSFT PCh -150V -13A 290mOhm 44nC | ||
| IRF6215STRRPBF | Darlington Transistors MOSFET 1 P-CH -150V HEXFET 290mOhms 44nC | ||
| IRF6215STRLPBF-CUT TAPE | Nuevo y original | ||
| IRF6215STRL | Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IRF6215STRPBF | Nuevo y original |