IRF2805ST

IRF2805STRLPBF vs IRF2805STRRPBF vs IRF2805STRPBF

 
PartNumberIRF2805STRLPBFIRF2805STRRPBFIRF2805STRPBF
DescriptionMOSFET MOSFT 55V 135A 4.7mOhm 150nCMOSFET N-CH 55V 135A D2PAK
ManufacturerInfineon-IR
Product CategoryMOSFET-IC Chips
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263AB-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current135 A--
Rds On Drain Source Resistance4.7 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge150 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation200 W--
ConfigurationSingle--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min91 S--
Fall Time110 ns--
Product TypeMOSFET--
Rise Time120 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time68 ns--
Typical Turn On Delay Time14 ns--
Part # AliasesSP001561594--
Unit Weight0.139332 oz--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IRF2805STRLPBF MOSFET MOSFT 55V 135A 4.7mOhm 150nC
IRF2805STRRPBF MOSFET N-CH 55V 135A D2PAK
IRF2805STRLPBF MOSFET N-CH 55V 135A D2PAK
IRF2805STRPBF Nuevo y original
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