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| PartNumber | IRF1503STRLPBF | IRF1503STRRPBF | IRF1503STRPBF |
| Description | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC | MOSFET N-CH 30V 75A D2PAK | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 75 A | - | - |
| Rds On Drain Source Resistance | 3.3 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 130 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 200 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 75 S | - | - |
| Fall Time | 48 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 130 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 59 ns | - | - |
| Typical Turn On Delay Time | 17 ns | - | - |
| Part # Aliases | SP001550938 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF1503STRLPBF | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC | |
| IRF1503STRRPBF | MOSFET N-CH 30V 75A D2PAK | ||
| IRF1503STRLPBF | RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC | ||
| IRF1503STRPBF | Nuevo y original |