 |  | | |
| PartNumber | IRF1010EZSTRLP | IRF1010EZS | IRF1010EZSPBF |
| Description | MOSFET MOSFT 60V 84A 8.5mOhm 58nC | MOSFET N-CH 60V 75A D2PAK | MOSFET N-CH 60V 75A D2PAK |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 75 A | - | - |
| Rds On Drain Source Resistance | 8.5 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 58 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 140 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon / IR | - | - |
| Fall Time | 54 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 90 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 38 ns | - | - |
| Typical Turn On Delay Time | 19 ns | - | - |
| Part # Aliases | SP001561470 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon / IR |
IRF1010EZSTRLP | MOSFET MOSFT 60V 84A 8.5mOhm 58nC | |
Infineon Technologies |
IRF1010EZSTRLP | MOSFET N-CH 60V 75A D2PAK | |
| IRF1010EZS | MOSFET N-CH 60V 75A D2PAK | ||
| IRF1010EZSPBF | MOSFET N-CH 60V 75A D2PAK | ||
| IRF1010EZSTRLP-CUT TAPE | Nuevo y original | ||
| IRF1010EZSPBF,IRF1010EZS | Nuevo y original | ||
| IRF1010EZSPBF,IRF1010EZSTRLPBF,F1010EZS | Nuevo y original | ||
| IRF1010EZSTRLPBF | Nuevo y original |