PartNumber | IPU60R1K5CEAKMA2 | IPU60R1K5CEAKMA1 | IPU60R1K5CEBKMA1 |
Description | MOSFET CONSUMER | MOSFET CONSUMER | MOSFET N-Ch 600V 3.1A IPAK-3 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-251-3 | TO-251-3 | TO-251-3 |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Tradename | CoolMOS | - | CoolMOS |
Packaging | Tube | Tube | Tube |
Height | 6.22 mm | 6.22 mm | 6.22 mm |
Length | 6.73 mm | 6.73 mm | 6.73 mm |
Series | CoolMOS CE | - | - |
Width | 2.38 mm | 2.38 mm | 2.38 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 1500 | 1500 | 1500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | IPU60R1K5CE SP001396898 | IPU60R1K5CEAKMA1 SP001369534 | IPU60R1K5CE SP001276062 |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.012102 oz |
Number of Channels | - | - | 1 Channel |
Transistor Polarity | - | - | N-Channel |
Id Continuous Drain Current | - | - | 3.1 A |
Rds On Drain Source Resistance | - | - | 1.5 Ohms |
Vgs th Gate Source Threshold Voltage | - | - | 2.5 V |
Vgs Gate Source Voltage | - | - | 20 V |
Qg Gate Charge | - | - | 9.4 nC |
Minimum Operating Temperature | - | - | - 40 C |
Maximum Operating Temperature | - | - | + 150 C |
Pd Power Dissipation | - | - | 28 W |
Configuration | - | - | Single |
Channel Mode | - | - | Enhancement |
Transistor Type | - | - | 1 N-Channel |
Fall Time | - | - | 20 ns |
Rise Time | - | - | 7 ns |
Typical Turn Off Delay Time | - | - | 40 ns |
Typical Turn On Delay Time | - | - | 8 ns |