 | | | |
| PartNumber | IPS12CN10 | IPS12CN10L | IPS12CN10L G |
| Description | IGBT Transistors MOSFET N-Ch 100V 69A IPAK-3 | ||
| Manufacturer | - | INFNEON | Infineon Technologies |
| Product Category | - | FETs - Single | Transistors - FETs, MOSFETs - Single |
| Series | - | - | IPS12CN10 |
| Packaging | - | - | Tube |
| Part Aliases | - | - | IPS12CN10LGBKMA1 |
| Unit Weight | - | - | 0.139332 oz |
| Mounting Style | - | - | Through Hole |
| Package Case | - | - | IPAK-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 125 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 5 ns |
| Rise Time | - | - | 9 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 69 A |
| Vds Drain Source Breakdown Voltage | - | - | 100 V |
| Rds On Drain Source Resistance | - | - | 11.8 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 39 ns |
| Typical Turn On Delay Time | - | - | 14 ns |
| Channel Mode | - | - | Enhancement |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| IPS12CN10 | Nuevo y original | ||
| IPS12CN10L | Nuevo y original | ||
| IPS12CN10LG | Power Field-Effect Transistor, 69A I(D), 100V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | ||
| IPS12CN10L G | IGBT Transistors MOSFET N-Ch 100V 69A IPAK-3 | ||
Infineon Technologies |
IPS12CN10LGBKMA1 | MOSFET N-CH 100V 69A TO251-3-11 |