PartNumber | IPP60R199CP | IPP60R199 | IPP60R199CP , 2SJ132 |
Description | MOSFET N-Ch 650V 16A TO220-3 CoolMOS CP | ||
Manufacturer | Infineon | INFINEON | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-220-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 600 V | - | - |
Id Continuous Drain Current | 16 A | - | - |
Rds On Drain Source Resistance | 180 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 43 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 139 W | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | CoolMOS | CoolMOS | - |
Packaging | Tube | Tube | - |
Height | 15.65 mm | - | - |
Length | 10 mm | - | - |
Series | CoolMOS CE | CoolMOS CP | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 4.4 mm | - | - |
Brand | Infineon Technologies | - | - |
Fall Time | 5 ns | 5 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 5 ns | 5 ns | - |
Factory Pack Quantity | 500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 50 ns | 50 ns | - |
Typical Turn On Delay Time | 10 ns | 10 ns | - |
Part # Aliases | IPP60R199CPXKSA1 IPP6R199CPXK SP000084278 | - | - |
Unit Weight | 0.211644 oz | 0.211644 oz | - |
Part Aliases | - | IPP60R199CPXK IPP60R199CPXKSA1 SP000084278 | - |
Package Case | - | TO-220-3 | - |
Pd Power Dissipation | - | 139 W | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 16 A | - |
Vds Drain Source Breakdown Voltage | - | 650 V | - |
Rds On Drain Source Resistance | - | 199 mOhms | - |