IPP5

IPP530N15N3 G vs IPP530N15N3GXKSA1

 
PartNumberIPP530N15N3 GIPP530N15N3GXKSA1
DescriptionMOSFET N-Ch 150V 21A TO220-3 OptiMOS 3MOSFET MV POWER MOS
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSY-
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3
Number of Channels1 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage150 V-
Id Continuous Drain Current21 A-
Rds On Drain Source Resistance53 mOhms-
Vgs Gate Source Voltage20 V-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 175 C-
Pd Power Dissipation68 W-
ConfigurationSingle-
TradenameOptiMOSOptiMOS
PackagingTubeTube
Height15.65 mm15.65 mm
Length10 mm10 mm
SeriesOptiMOS 3-
Transistor Type1 N-Channel-
Width4.4 mm4.4 mm
BrandInfineon TechnologiesInfineon Technologies
Fall Time3 ns-
Product TypeMOSFETMOSFET
Rise Time9 ns-
Factory Pack Quantity500-
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time13 ns-
Typical Turn On Delay Time9 ns-
Part # AliasesIPP530N15N3GXKSA1 IPP53N15N3GXK SP000521722G IPP530N15N3 IPP53N15N3GXK SP000521722
Unit Weight0.211644 oz0.211644 oz
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IPP530N15N3 G MOSFET N-Ch 150V 21A TO220-3 OptiMOS 3
IPP530N15N3GXKSA1 MOSFET N-CH 150V 21A TO220-3
IPP530N15N3 G Darlington Transistors MOSFET N-Ch 150V 21A TO220-3 OptiMOS 3
Infineon Technologies
Infineon Technologies
IPP530N15N3GXKSA1 MOSFET MV POWER MOS
IPP530N15N3G Nuevo y original
IPP530N15N3G 530N15 Nuevo y original
IPP530N15N3G 530N15N Nuevo y original
IPP530N15N3GS Nuevo y original
IPP5CN10N Nuevo y original
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