 | |  | |
| PartNumber | IPP16CN10NGXKSA1 | IPP16CN10N G | IPP16CN10NGHKSA1 |
| Description | MOSFET N-Ch 100V 53A TO220-3 | MOSFET N-Ch 100V 53A TO220-3 OptiMOS 2 | MOSFET N-CH 100V TO-220 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 53 A | 53 A | - |
| Rds On Drain Source Resistance | 16 mOhms | 16.5 mOhms | - |
| Configuration | Single | Single | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Tube | Tube | - |
| Height | 15.65 mm | 15.65 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | OptiMOS 2 | OptiMOS 2 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.4 mm | 4.4 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | G IPP16CN10N IPP16CN1NGXK SP000680880 | IPP16CN10NGHKSA1 IPP16CN1NGXK SP000096469 | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 100 W | - |
| Channel Mode | - | Enhancement | - |
| Fall Time | - | 7 ns | - |
| Rise Time | - | 14 ns | - |
| Typical Turn Off Delay Time | - | 27 ns | - |
| Typical Turn On Delay Time | - | 15 ns | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP16CN10NGXKSA1 | MOSFET N-Ch 100V 53A TO220-3 | |
| IPP16CN10N G | MOSFET N-Ch 100V 53A TO220-3 OptiMOS 2 | ||
| IPP16CN10NGHKSA1 | MOSFET N-CH 100V TO-220 | ||
| IPP16CN10NGXKSA1 | MOSFET N-Ch 100V 53A TO220-3 | ||
| IPP16CN10NG | Power Field-Effect Transistor, 53A I(D), 100V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IPP16CN10N | Nuevo y original | ||
| IPP16CN10NG HF | Nuevo y original | ||
| IPP16CN10NG(16CN10N) | Nuevo y original | ||
| IPP16CN10NG,16CN10N | Nuevo y original | ||
| IPP16CN10NG,IPP16CN10N,1 | Nuevo y original | ||
| IPP16CN10NGHKSA1 , 2SD87 | Nuevo y original | ||
| IPP16CN10NGXKSA1 , 2SD88 | Nuevo y original | ||
| IPP16CN10N G | MOSFET N-Ch 100V 53A TO220-3 OptiMOS 2 |