IPP16CN1

IPP16CN10N G vs IPP16CN10NGHKSA1 vs IPP16CN10LGXKSA1

 
PartNumberIPP16CN10N GIPP16CN10NGHKSA1IPP16CN10LGXKSA1
DescriptionMOSFET N-Ch 100V 53A TO220-3 OptiMOS 2MOSFET N-CH 100V TO-220MOSFET N-CH 100V 54A TO220-3
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current53 A--
Rds On Drain Source Resistance16.5 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation100 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingTube--
Height15.65 mm--
Length10 mm--
SeriesOptiMOS 2--
Transistor Type1 N-Channel--
Width4.4 mm--
BrandInfineon Technologies--
Fall Time7 ns--
Product TypeMOSFET--
Rise Time14 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time27 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesIPP16CN10NGHKSA1 IPP16CN1NGXK SP000096469--
Unit Weight0.211644 oz--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IPP16CN10NGXKSA1 MOSFET N-Ch 100V 53A TO220-3
IPP16CN10N G MOSFET N-Ch 100V 53A TO220-3 OptiMOS 2
IPP16CN10NGHKSA1 MOSFET N-CH 100V TO-220
IPP16CN10LGXKSA1 MOSFET N-CH 100V 54A TO220-3
IPP16CN10NGXKSA1 MOSFET N-Ch 100V 53A TO220-3
IPP16CN10NG Power Field-Effect Transistor, 53A I(D), 100V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPP16CN10L Nuevo y original
IPP16CN10LG Nuevo y original
IPP16CN10N Nuevo y original
IPP16CN10NG HF Nuevo y original
IPP16CN10NG(16CN10N) Nuevo y original
IPP16CN10NG,16CN10N Nuevo y original
IPP16CN10NG,IPP16CN10N,1 Nuevo y original
IPP16CN10NGHKSA1 , 2SD87 Nuevo y original
IPP16CN10NGXKSA1 , 2SD88 Nuevo y original
IPP16CN10N G MOSFET N-Ch 100V 53A TO220-3 OptiMOS 2
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