IPN80R1K4

IPN80R1K4P7ATMA1 vs IPN80R1K4P7ATMA1-CUT TAPE vs IPN80R1K4P7

 
PartNumberIPN80R1K4P7ATMA1IPN80R1K4P7ATMA1-CUT TAPEIPN80R1K4P7
DescriptionMOSFET LOW POWER_NEW
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePG-SOT-223-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage800 V--
Id Continuous Drain Current4 A--
Rds On Drain Source Resistance1.2 Ohms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge10 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation7 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameCoolMOS--
PackagingReel--
SeriesCoolMOS P7--
Transistor Type1 N-Channel--
BrandInfineon Technologies--
Fall Time20 ns--
Product TypeMOSFET--
Rise Time8 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesIPN80R1K4P7 SP001657528--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IPN80R1K4P7ATMA1 MOSFET LOW POWER_NEW
IPN80R1K4P7ATMA1 MOSFET N-CHANNEL 800V 4A SOT223
IPN80R1K4P7ATMA1-CUT TAPE Nuevo y original
IPN80R1K4P7 Nuevo y original
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