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| PartNumber | IPL65R650C6SATMA1 | IPL65R660E6AUMA1 |
| Description | MOSFET N-Ch 650V 6.7A ThinPAK 5x6 | MOSFET LOW POWER PRICE/PERFORM |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | ThinPAK-56-8 | VSON-4 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V |
| Id Continuous Drain Current | 6.7 A | 7 A |
| Rds On Drain Source Resistance | 650 mOhms | 594 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 2.5 V |
| Vgs Gate Source Voltage | 30 V | 20 V |
| Qg Gate Charge | 21 nC | 23 nC |
| Minimum Operating Temperature | - 40 C | - 40 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 56.8 W | 63 W |
| Configuration | Single | Single |
| Tradename | CoolMOS | CoolMOS |
| Packaging | Reel | Reel |
| Height | 1.1 mm | 1.1 mm |
| Length | 6 mm | 8 mm |
| Series | CoolMOS C6 | CoolMOS E6 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 5 mm | 8 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 13 ns | 11 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 9 ns | 8 ns |
| Factory Pack Quantity | 5000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 80 ns | 64 ns |
| Typical Turn On Delay Time | 12 ns | 10 ns |
| Part # Aliases | IPL65R650C6S SP001163082 | IPL65R660E6AUMA1 SP000895212 |
| Unit Weight | 0.002677 oz | - |
| Channel Mode | - | Enhancement |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPL65R650C6SATMA1 | MOSFET N-Ch 650V 6.7A ThinPAK 5x6 | |
| IPL65R650C6SATMA1 | MOSFET N-CH 8TSON | ||
| IPL65R660E6AUMA1 | MOSFET LOW POWER PRICE/PERFORM | ||
Infineon Technologies |
IPL65R660E6AUMA1 | MOSFET LOW POWER PRICE/PERFORM | |
| IPL65R650C6S | Nuevo y original | ||
| IPL65R660E6 | MOSFET LOW POWER PRICE/PERFORM |