PartNumber | IPL60R065P7AUMA1 | IPL60R065C7AUMA1 |
Description | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_NEW |
Manufacturer | Infineon | Infineon |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | VSON-4 | VSON-4 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V |
Id Continuous Drain Current | 41 A | 29 A |
Rds On Drain Source Resistance | 53 mOhms | 65 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | 3 V |
Vgs Gate Source Voltage | 20 V | 20 V |
Qg Gate Charge | 67 nC | 68 nC |
Minimum Operating Temperature | - 40 C | - 40 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 201 W | 180 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Packaging | Reel | Reel |
Series | CoolMOS P7 | CoolMOS C7 |
Transistor Type | 1 N-Channel | - |
Brand | Infineon Technologies | Infineon Technologies |
Fall Time | 4 ns | 3.5 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 7 ns | 5 ns |
Factory Pack Quantity | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 73 ns | 57 ns |
Typical Turn On Delay Time | 16 ns | 12 ns |
Part # Aliases | IPL60R065P7 SP001657396 | IPL60R065C7 SP001385034 |
Tradename | - | CoolMOS |
Height | - | 1.1 mm |
Length | - | 8 mm |
Width | - | 8 mm |