 |  | | |
| PartNumber | IPI80N06S3L-08 | IPI80N06S3L06XK | IPI80N06S3L-05 |
| Description | MOSFET N-Ch 55V 80A I2PAK-3 | MOSFET N-CH 55V 80A TO-262 | MOSFET N-CH 55V 80A TO-262 |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-262-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 55 V | - | - |
| Id Continuous Drain Current | 80 A | - | - |
| Rds On Drain Source Resistance | 7.9 mOhms | - | - |
| Vgs Gate Source Voltage | 16 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 105 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 9.45 mm | - | - |
| Length | 10.2 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 25 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 35 ns | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 39 ns | - | - |
| Typical Turn On Delay Time | 16 ns | - | - |
| Part # Aliases | IPI80N06S3L08XK | - | - |
| Unit Weight | 0.084199 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPI80N06S3L-08 | MOSFET N-Ch 55V 80A I2PAK-3 | |
Infineon Technologies |
IPI80N06S3L06XK | MOSFET N-CH 55V 80A TO-262 | |
| IPI80N06S3L-05 | MOSFET N-CH 55V 80A TO-262 | ||
| IPI80N06S3L-08 | MOSFET N-CH 55V 80A TO-262 | ||
| IPI80N06S3L-06 | MOSFET N-Ch 55V 80A I2PAK-3 |