 | |  | |
| PartNumber | IPI200N25N3 G | IPI200N25N3GAKSA1 | IPI200N15N3 G |
| Description | MOSFET N-Ch 250V 64A I2PAK-3 OptiMOS 3 | MOSFET MV POWER MOS | MOSFET N-Ch 150V 50A I2PAK-3 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-262-3 | TO-262-3 | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 250 V | - | - |
| Id Continuous Drain Current | 64 A | - | - |
| Rds On Drain Source Resistance | 20 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 64 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | - | Single |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Tube | Tube | Tube |
| Height | 9.45 mm | 9.45 mm | - |
| Length | 10.2 mm | 10.2 mm | - |
| Series | OptiMOS 3 | - | OptiMOS 3 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 4.5 mm | 4.5 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 12 nS | - | 6 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 20 nS | - | 11 ns |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 45 nS | - | 23 ns |
| Part # Aliases | IPI200N25N3GAKSA1 IPI2N25N3GXK SP000714308 | G IPI200N25N3 IPI2N25N3GXK SP000714308 | - |
| Unit Weight | 0.084199 oz | 0.084199 oz | 0.084199 oz |
| Part Aliases | - | - | IPI200N15N3GHKSA1 SP000414724 |
| Package Case | - | - | I2PAK-3 |
| Pd Power Dissipation | - | - | 150 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 50 A |
| Vds Drain Source Breakdown Voltage | - | - | 150 V |
| Rds On Drain Source Resistance | - | - | 20 mOhms |
| Typical Turn On Delay Time | - | - | 14 ns |
| Channel Mode | - | - | Enhancement |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPI200N25N3 G | MOSFET N-Ch 250V 64A I2PAK-3 OptiMOS 3 | |
| IPI26CNE8N G | MOSFET N-CH 85V 35A TO262-3 | ||
| IPI200N25N3GAKSA1 | MOSFET N-CH 250V 64A TO262-3 | ||
| IPI22N03S4L15AKSA1 | MOSFET N-CH 30V 22A TO262-3 | ||
| IPI25N06S3-25 | MOSFET N-CH 55V 25A TO-262 | ||
| IPI200N15N3 G | MOSFET N-Ch 150V 50A I2PAK-3 OptiMOS 3 | ||
| IPI26CN10N G | IGBT Transistors MOSFET N-Ch 100V 35A I2PAK-3 | ||
| IPI25N06S3L-22 | IGBT Transistors MOSFET N-Ch 55V 25A I2PAK-3 | ||
Infineon Technologies |
IPI25N06S3L-22 | MOSFET N-Ch 55V 25A I2PAK-3 | |
| IPI200N25N3GAKSA1 | MOSFET MV POWER MOS | ||
| IPI200N15N3 | Nuevo y original | ||
| IPI200N15N3G | Nuevo y original | ||
| IPI200N25N3 G | MOSFET N-Ch 250V 64A I2PAK-3 OptiMOS 3 | ||
| IPI200N25N3G | Nuevo y original | ||
| IPI20N65C3 | Nuevo y original | ||
| IPI26CN10N | Nuevo y original | ||
| IPI26CN10NG | Nuevo y original | ||
| IPI26CNE8N | Nuevo y original | ||
| IPI26CNE8NG | Nuevo y original | ||
| IPI200N15N3GXKSA1 | MOSFET N-Ch 150V 50A I2PAK-3 | ||
| IPI22N03S4L-15 | IGBT Transistors MOSFET N-Ch 30V 22A I2PAK-3 OptiMOS-T2 |