PartNumber | IPI100N04S303AKSA1 | IPI100N04S3 | IPI100N04S3-03 |
Description | MOSFET N-CHANNEL_30/40V | MOSFET N-Ch 40V 100A I2PAK-3 OptiMOS-T | |
Manufacturer | Infineon | - | Infineon Technologies |
Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
Technology | Si | - | Si |
Mounting Style | Through Hole | - | Through Hole |
Package / Case | TO-262-3 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Configuration | Single | - | Single |
Packaging | Tube | - | Tube |
Height | 9.45 mm | - | - |
Length | 10.2 mm | - | - |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Width | 4.5 mm | - | - |
Brand | Infineon Technologies | - | - |
Product Type | MOSFET | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | IPI100N04S3-03 IPI100N04S303XK SP000261223 | - | - |
Series | - | - | OptiMOS-T |
Part Aliases | - | - | IPI100N04S303AKSA1 IPI100N04S303XK SP000261223 |
Unit Weight | - | - | 0.084199 oz |
Tradename | - | - | OptiMOS |
Package Case | - | - | I2PAK-3 |
Pd Power Dissipation | - | - | 214 W |
Maximum Operating Temperature | - | - | + 175 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 17 ns |
Rise Time | - | - | 16 ns |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 100 A |
Vds Drain Source Breakdown Voltage | - | - | 40 V |
Rds On Drain Source Resistance | - | - | 3.3 mOhms |
Typical Turn Off Delay Time | - | - | 46 ns |
Typical Turn On Delay Time | - | - | 30 ns |
Channel Mode | - | - | Enhancement |