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| PartNumber | IPI086N10N3 G | IPI084N06L3GXKSA1 | IPI084N06L3 G |
| Description | MOSFET N-Ch 100V 80A I2PAK-3 OptiMOS 3 | MOSFET N-Ch 60V 50A I2PAK-3 | MOSFET N-Ch 60V 50A I2PAK-3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-262-3 | TO-262-3 | TO-262-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 60 V | 60 V |
| Id Continuous Drain Current | 80 A | 50 A | 50 A |
| Rds On Drain Source Resistance | 8.2 mOhms | 7 mOhms | 7 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 125 W | 79 W | 79 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Tube | Tube | Tube |
| Height | 9.45 mm | 9.45 mm | 9.45 mm |
| Length | 10.2 mm | 10.2 mm | 10.2 mm |
| Series | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.5 mm | 4.5 mm | 4.5 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 8 ns | 7 ns | 7 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 42 ns | 26 ns | 26 ns |
| Factory Pack Quantity | 500 | 500 | 500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 31 ns | 37 ns | 37 ns |
| Typical Turn On Delay Time | 18 ns | 15 ns | 15 ns |
| Part # Aliases | IPI086N10N3GXKSA1 IPI86N1N3GXK SP000683070 | G IPI084N06L3 SP001065242 | IPI084N06L3GXKSA1 SP001065242 |
| Unit Weight | 0.073511 oz | 0.073511 oz | 0.070548 oz |
| Vgs th Gate Source Threshold Voltage | - | 1.2 V | 1.2 V |
| Qg Gate Charge | - | 29 nC | 29 nC |
| Forward Transconductance Min | - | 35 S | 35 S |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPI086N10N3 G | MOSFET N-Ch 100V 80A I2PAK-3 OptiMOS 3 | |
| IPI084N06L3GXKSA1 | MOSFET N-Ch 60V 50A I2PAK-3 | ||
| IPI084N06L3 G | MOSFET N-Ch 60V 50A I2PAK-3 | ||
| IPI084N06L3GXKSA1 | MOSFET N-CH TO262-3 | ||
| IPI086N10N3GXKSA1 | MOSFET N-CH 100V 80A TO262-3 | ||
| IPI08CN10N G | MOSFET N-CH 100V 95A TO262-3 | ||
| IPI08CNE8N G | MOSFET N-CH 85V 95A TO262-3 | ||
Infineon Technologies |
IPI086N10N3GXKSA1 | MOSFET MV POWER MOS | |
| IPI08CN10N G | MOSFET N-Ch 100V 95A I2PAK-3 | ||
| IPI086N10N3GXK | Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI086N10N3GXKSA1) | ||
| IPI084N06L3G | Nuevo y original | ||
| IPI086N10N | Nuevo y original | ||
| IPI086N10N3 | Nuevo y original | ||
| IPI086N10N3G | Trans MOSFET N-CH 100V 80A 3-Pin TO-262 Tube (Alt: IPI086N10N3 G) | ||
| IPI086N10N3G,086N10N | Nuevo y original | ||
| IPI086N10N3GXKSA1 , 2SD2 | Nuevo y original | ||
| IPI086N10NG | Nuevo y original | ||
| IPI08CN10N | Nuevo y original | ||
| IPI08CN10NG | Nuevo y original | ||
| IPI08CN10NS | Nuevo y original | ||
| IPI08CNE8NG | Nuevo y original | ||
| IPI086N10N3 G | Darlington Transistors MOSFET N-Ch 100V 80A I2PAK-3 OptiMOS 3 |