 |  | | |
| PartNumber | IPF13N03LA G | IPF13N03LA | IPF13N03LAG |
| Description | MOSFET N-Ch 25V 30A DPAK-2 | Power Field-Effect Transistor, 30A I(D), 25V, 0.0128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-Reverse-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 25 V | - | - |
| Id Continuous Drain Current | 30 A | - | - |
| Rds On Drain Source Resistance | 21.9 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 46 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.28 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 36 S / 18 S | - | - |
| Fall Time | 2.6 ns | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 4.6 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 15 ns | - | - |
| Typical Turn On Delay Time | 5.4 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPF13N03LA G | MOSFET N-Ch 25V 30A DPAK-2 | |
| IPF13N03LA | Nuevo y original | ||
Infineon Technologies |
IPF13N03LA G | MOSFET N-CH 25V 30A DPAK | |
| IPF13N03LAG | Power Field-Effect Transistor, 30A I(D), 25V, 0.0128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |