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| PartNumber | IPD70N12S311ATMA1 | IPD70N12S3L12ATMA1 |
| Description | MOSFET MOSFET_(120V,300V) | MOSFET N-CHANNEL 100+ |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 120 V | - |
| Id Continuous Drain Current | 70 A | - |
| Rds On Drain Source Resistance | 9.2 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 65 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 125 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 |
| Tradename | OptiMOS | - |
| Packaging | Reel | Reel |
| Series | N Channel | - |
| Transistor Type | 1 N-Channel | - |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 8 ns | - |
| Moisture Sensitive | Yes | Yes |
| Product Type | MOSFET | MOSFET |
| Rise Time | 8 ns | - |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 25 ns | - |
| Typical Turn On Delay Time | 17 ns | - |
| Part # Aliases | IPD70N12S3-11 SP001400108 | IPD70N12S3L-12 SP001400112 |
| Unit Weight | 0.011993 oz | 0.011993 oz |
| Height | - | 2.3 mm |
| Length | - | 6.5 mm |
| Width | - | 6.22 mm |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD70N12S311ATMA1 | MOSFET MOSFET_(120V,300V) | |
| IPD70N12S3L12ATMA1 | MOSFET N-CHANNEL 100+ | ||
| IPD70N12S311ATMA1 | MOSFET N-CH 120V 70A TO252-3 | ||
| IPD70N12S3L12ATMA1 | MOSFET N-CHANNEL_100+ | ||
| IPD70N12S3-11 | - Bulk (Alt: IPD70N12S3-11) |