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IPD60R520C6

IPD60R520C6ATMA1 vs IPD60R520C6BTMA1 vs IPD60R520C6

 
PartNumberIPD60R520C6ATMA1IPD60R520C6BTMA1IPD60R520C6
DescriptionMOSFET N-Ch 600V 8.1A DPAK-2MOSFET N-CH 600V 8.1A TO252MOSFET N-Ch 600V 8.1A DPAK-2 CoolMOS C6
ManufacturerInfineon-INFINEON
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-252-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage600 V--
ConfigurationSingle-Single
TradenameCoolMOS-CoolMOS
PackagingReel-Reel
Height2.3 mm--
Length6.5 mm--
SeriesCoolMOS C6-CoolMOS C6
Transistor Type1 N-Channel-1 N-Channel
Width6.22 mm--
BrandInfineon Technologies--
Product TypeMOSFET--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Part # AliasesIPD60R520C6ATMA1 SP001117722--
Unit Weight0.139332 oz-0.139332 oz
Part Aliases--IPD60R520C6BTMA1 IPD60R520C6XT SP000645070
Package Case--TO-252-3
Pd Power Dissipation--66 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Fall Time--14 ns
Rise Time--10 ns
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--8.1 A
Vds Drain Source Breakdown Voltage--600 V
Rds On Drain Source Resistance--520 mOhms
Typical Turn Off Delay Time--85 ns
Typical Turn On Delay Time--13 ns
Qg Gate Charge--23.4 nC
Channel Mode--Enhancement
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies 		IPD60R520C6ATMA1 MOSFET N-Ch 600V 8.1A DPAK-2
Infineon Technologies
Infineon Technologies 		IPD60R520C6BTMA1 MOSFET N-CH 600V 8.1A TO252
IPD60R520C6ATMA1 RF Bipolar Transistors MOSFET N-Ch 600V 8.1A DPAK-2
IPD60R520C6 MOSFET N-Ch 600V 8.1A DPAK-2 CoolMOS C6
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