PartNumber | IPD60R460CEAUMA1 | IPD60R460CEATMA1 |
Description | MOSFET CONSUMER | MOSFET N-Ch 600V 9.1A DPAK-2 |
Manufacturer | Infineon | Infineon |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 |
Vds Drain Source Breakdown Voltage | 600 V | 600 V |
Tradename | CoolMOS | CoolMOS |
Packaging | Reel | Reel |
Height | 2.3 mm | 2.3 mm |
Length | 6.5 mm | 6.5 mm |
Series | CoolMOS CE | - |
Width | 6.22 mm | 6.22 mm |
Brand | Infineon Technologies | Infineon Technologies |
Moisture Sensitive | Yes | - |
Product Type | MOSFET | MOSFET |
Factory Pack Quantity | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs |
Part # Aliases | IPD60R460CE SP001396882 | IPD60R460CEATMA1 SP001276024 |
Unit Weight | 0.011993 oz | 0.139332 oz |
Number of Channels | - | 1 Channel |
Transistor Polarity | - | N-Channel |
Id Continuous Drain Current | - | 9.1 A |
Rds On Drain Source Resistance | - | 460 mOhms |
Vgs th Gate Source Threshold Voltage | - | 2.5 V |
Vgs Gate Source Voltage | - | 20 V |
Qg Gate Charge | - | 28 nC |
Minimum Operating Temperature | - | - 40 C |
Maximum Operating Temperature | - | + 150 C |
Pd Power Dissipation | - | 74 W |
Configuration | - | Single |
Channel Mode | - | Enhancement |
Transistor Type | - | 1 N-Channel |
Fall Time | - | 10 ns |
Rise Time | - | 9 ns |
Typical Turn Off Delay Time | - | 70 ns |
Typical Turn On Delay Time | - | 11 ns |