| PartNumber | IPD50R399CPATMA1 | IPD50R399CPBTMA1 | IPD50R399CP |
| Description | MOSFET N-Ch 550V 9A DPAK-2 | MOSFET N-Ch 550V 9A DPAK-2 CoolMOS CP | MOSFET N-CH 550V 9A TO-252 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V | - |
| Id Continuous Drain Current | 9 A | 9 A | - |
| Rds On Drain Source Resistance | 399 mOhms | 360 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 2.5 V | - |
| Vgs Gate Source Voltage | 30 V | 20 V | - |
| Qg Gate Charge | 17 nC | 23 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 83 W | 83 W | - |
| Configuration | Single | Single | - |
| Tradename | CoolMOS | - | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | CoolMOS CE | XPD50R399 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 14 ns | 14 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 14 ns | 14 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 80 ns | 80 ns | - |
| Typical Turn On Delay Time | 35 ns | 35 ns | - |
| Part # Aliases | IPD50R399CP SP001117700 | IPD50R399CPBTMA1 SP000307379 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| RoHS | - | Y | - |
| Channel Mode | - | Enhancement | - |