| PartNumber | IPD50N10S3L-16 | IPD50N12S3L15ATMA1 | IPD50N10S3L16ATMA1 |
| Description | MOSFET N-Ch 100V 50A DPAK-2 OptiMOS-T | MOSFET N-CHANNEL 100+ | MOSFET N-CH 100V 50A TO252-3 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 50 A | - | - |
| Rds On Drain Source Resistance | 15 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 49 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 100 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | OptiMOS-T | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 5 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 5 ns | - | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 29 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Part # Aliases | IPD50N10S3L16ATMA1 IPD5N1S3L16XT SP000386185 | IPD50N12S3L-15 SP001400104 | - |
| Unit Weight | 0.014110 oz | 0.011993 oz | - |
| Moisture Sensitive | - | Yes | - |