PartNumber | IPD50N04S3-08 | IPD50N04S3-09 | IPD50N04S308ATMA1 |
Description | MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T | MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T | MOSFET N-CHANNEL_30/40V |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
Id Continuous Drain Current | 50 A | 50 A | - |
Rds On Drain Source Resistance | 8 mOhms | 9 mOhms | - |
Vgs Gate Source Voltage | 20 V | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 68 W | - | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | - |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | Reel |
Height | 2.3 mm | 2.3 mm | 2.3 mm |
Length | 6.5 mm | 6.5 mm | 6.5 mm |
Series | OptiMOS-T | OptiMOS-T | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 6.22 mm | 6.22 mm | 6.22 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 6 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 7 ns | - | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 16 ns | - | - |
Typical Turn On Delay Time | 11 ns | - | - |
Part # Aliases | IPD50N04S308ATMA1 IPD5N4S38XT SP000261218 | IPD50N04S309ATMA1 IPD5N4S39XT SP000415582 | IPD50N04S3-08 IPD5N4S38XT SP000261218 |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |