 | |  | |
| PartNumber | IPD50N03S2L-06 | IPD50N03S2L06ATMA1 | IPD50N03S2L |
| Description | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS | MOSFET N-CHANNEL_30/40V | |
| Manufacturer | Infineon | Infineon | infineon |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 50 A | - | - |
| Rds On Drain Source Resistance | 6.4 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 136 W | - | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 15 ns | - | 15 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 30 ns | - | 30 ns |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 40 ns | - | 40 ns |
| Typical Turn On Delay Time | 10 ns | - | 10 ns |
| Part # Aliases | IPD50N03S2L06ATMA1 IPD5N3S2L6XT SP000254461 | IPD50N03S2L-06 IPD5N3S2L6XT SP000254461 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Series | - | - | OptiMOS |
| Part Aliases | - | - | IPD50N03S2L06ATMA1 IPD50N03S2L06XT SP000254461 |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 136 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 50 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Rds On Drain Source Resistance | - | - | 6.4 mOhms |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD50N03S2L-06 | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS | |
| IPD50N03S2L06ATMA1 | MOSFET N-CH 30V 50A TO252-3 | ||
Infineon Technologies |
IPD50N03S2L06ATMA1 | MOSFET N-CHANNEL_30/40V | |
| IPD50N03S2L | Nuevo y original | ||
| IPD50N03S2L-06 | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS |