 |  | | |
| PartNumber | IPD30N03S2L-10 | IPD30N03S2L-10G | IPD30N03S2L-13 |
| Description | MOSFET N-Ch 30V 30A DPAK-2 OptiMOS | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 30 A | - | - |
| Rds On Drain Source Resistance | 10 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 100 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 21 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 29 ns | - | - |
| Typical Turn On Delay Time | 7 ns | - | - |
| Part # Aliases | IPD30N03S2L10ATMA1 IPD3N3S2L1XT SP000254465 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD30N03S2L-10 | MOSFET N-Ch 30V 30A DPAK-2 OptiMOS | |
| IPD30N03S2L-10 | MOSFET N-Ch 30V 30A DPAK-2 OptiMOS | ||
| IPD30N03S2L-10G | Nuevo y original | ||
| IPD30N03S2L-13 | Nuevo y original |