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| PartNumber | IPD25DP06LMATMA1 | IPD25DP06NMATMA1 | IPD25DP06LMSAUMA1 |
| Description | MOSFET TRENCH 40<-<100V | MOSFET TRENCH 40<-<100V | MOSFET P-CH 60V TO252-3 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | - 60 V | - 60 V | - |
| Id Continuous Drain Current | - 6.5 A | - 6.5 A | - |
| Rds On Drain Source Resistance | 250 mOhms | 250 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - 2 V | - 4 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | - 13.8 nC | - 10.6 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 28 W | 28 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Series | IPD06P005 | IPD06P005 | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 8.4 S | 5.9 S | - |
| Fall Time | 3 ns | 5 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 6 ns | 7 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 22 ns | 14 ns | - |
| Typical Turn On Delay Time | 3 ns | 5 ns | - |
| Part # Aliases | IPD25DP06LM SP004987260 | IPD25DP06NM SP004987262 | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD25DP06LMATMA1 | MOSFET TRENCH 40<-<100V | |
| IPD25DP06NMATMA1 | MOSFET TRENCH 40<-<100V | ||
| IPD25DP06LMATMA1 | MOSFET P-CH 60V TO252-3 | ||
| IPD25DP06LMSAUMA1 | MOSFET P-CH 60V TO252-3 | ||
| IPD25DP06NMATMA1 | MOSFET P-CH 60V TO252-3 |