IPD06

IPD060N03LGATMA1 vs IPD060N03L G vs IPD060N03LGBTMA1

 
PartNumberIPD060N03LGATMA1IPD060N03L GIPD060N03LGBTMA1
DescriptionMOSFET N-Ch 30V 50A DPAK-2MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3MOSFET LV POWER MOS
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3TO-252-3
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current50 A50 A-
Rds On Drain Source Resistance6 mOhms6 mOhms-
ConfigurationSingleSingle-
TradenameOptiMOSOptiMOS-
PackagingReelReelReel
Height2.3 mm2.3 mm2.3 mm
Length6.5 mm6.5 mm6.5 mm
SeriesOptiMOS 3--
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm6.22 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETsMOSFETs
Part # AliasesG IPD060N03L IPD6N3LGXT SP000680632IPD060N03LGBTMA1 IPD6N3LGXT SP000236948IPD6N3LGXT SP000236948
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Vgs Gate Source Voltage-20 V-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 175 C-
Pd Power Dissipation-56 W-
Channel Mode-Enhancement-
Fall Time-3 ns-
Rise Time-3 ns-
Typical Turn Off Delay Time-20 ns-
Typical Turn On Delay Time-5 ns-
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IPD068N10N3GATMA1 MOSFET MV POWER MOS
IPD068P03L3GATMA1 MOSFET SMALL SIGNAL+P-CH
IPD060N03LGATMA1 MOSFET N-Ch 30V 50A DPAK-2
IPD060N03L G MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3
IPD060N03LGATMA1 MOSFET N-CH 30V 50A TO252-3
IPD060N03LGBTMA1 MOSFET N-CH 30V 50A TO252-3
IPD06N03LB G MOSFET N-CH 30V 50A TO-252
IPD068N10N3GATMA1 MOSFET N-CH 100V 90A
IPD068N10N3GBTMA1 MOSFET N-CH 100V 90A TO252-3
IPD068P03L3GATMA1 MOSFET P-CH 30V 70A TO252-3
IPD068P03L3GBTMA1 MOSFET P-CH 30V 70A TO252-3
IPD06N03LA G MOSFET N-CH 25V 50A DPAK
Infineon Technologies
Infineon Technologies
IPD060N03LGBTMA1 MOSFET LV POWER MOS
IPD06N03LB G MOSFET N-Ch 30V 50A DPAK-2
IPD068N10N3GBTMA1 MOSFET N-Ch 100V 90A DPAK-2 OptiMOS 3
IPD06P002NATMA1 MOSFET
IPD068P03L3GATMA1-CUT TAPE Nuevo y original
IPD060N03LGINCT - Bulk (Alt: IPD060N03LGINCT)
IPD060N03L Nuevo y original
IPD060N03LG Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-252
IPD060N03LG(060N03L) Nuevo y original
IPD060N03LG,060N03L Nuevo y original
IPD068N10N3 Nuevo y original
IPD068N10N3 G MOSFET N-Ch 100V 90A DPAK-2 OptiMOS 3
IPD068N10N3G Trans MOSFET N-CH 100V 90A 3-Pin(2+Tab) TO-252 (Alt: IPD068N10N3 G)
IPD068N10N3G 068N10N Nuevo y original
IPD068N10N3GS Nuevo y original
IPD068P03L Nuevo y original
IPD068P03L3G Trans MOSFET P-CH 30V 70A 3-Pin TO-252 T/R (Alt: IPD068P03L3 G)
IPD068P03L3G 068P03L Nuevo y original
IPD068P03L3GBTMA1 , 2SD2 Nuevo y original
IPD068P03L3GS Nuevo y original
IPD0694A3 Nuevo y original
IPD06N03 Nuevo y original
IPD06N03L Nuevo y original
IPD06N03LA MOSFET Transistor, N-Channel, TO-252AA
IPD06N03LA IPD06N03L Nuevo y original
IPD06N03LA,06N03LA Nuevo y original
IPD06N03LA-G Nuevo y original
IPD06N03LAG Power Field-Effect Transistor, 50A I(D), 25V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
IPD06N03LAG , MAX6476UT1 Nuevo y original
IPD06N03LAGX Nuevo y original
IPD06N03LAGXT Nuevo y original
IPD06N03LB Nuevo y original
IPD06N03LBG Nuevo y original
IPD06N03LG Nuevo y original
IPD06N03LZ Nuevo y original
IPD06N03LZG Nuevo y original
IPD06N06L Nuevo y original
IPD060N03L G MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3
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