IPD042P03L3G

IPD042P03L3GATMA1 vs IPD042P03L3GBTMA1

 
PartNumberIPD042P03L3GATMA1IPD042P03L3GBTMA1
DescriptionMOSFET SMALL SIGNAL+P-CHMOSFET P-Ch -30V 70A DPAK-2 OptiMOS P3
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3
Number of Channels1 Channel1 Channel
Transistor PolarityP-ChannelP-Channel
Vds Drain Source Breakdown Voltage30 V30 V
Id Continuous Drain Current70 A70 A
Rds On Drain Source Resistance6.8 mOhms3.5 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V
Vgs Gate Source Voltage4.5 V20 V
Qg Gate Charge131 nC175 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation150 W150 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
PackagingReelReel
Height2.3 mm2.3 mm
Length6.5 mm6.5 mm
Transistor Type1 P-Channel1 P-Channel
Width6.22 mm6.22 mm
BrandInfineon TechnologiesInfineon Technologies
Forward Transconductance Min65 S65 S
Fall Time22 ns22 ns
Product TypeMOSFETMOSFET
Rise Time167 ns167 ns
Factory Pack Quantity25002500
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time89 ns89 ns
Typical Turn On Delay Time21 ns21 ns
Part # AliasesG IPD042P03L3 SP001127836G IPD042P03L3 IPD42P3L3GXT SP000473922
Unit Weight0.139332 oz0.139332 oz
Series-XPD042P03
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IPD042P03L3GATMA1 MOSFET SMALL SIGNAL+P-CH
IPD042P03L3GBTMA1 MOSFET P-Ch -30V 70A DPAK-2 OptiMOS P3
IPD042P03L3GATMA1 MOSFET P-CH 30V 70A TO252-3
IPD042P03L3GBTMA1 MOSFET P-CH 30V 70A TO252-3
IPD042P03L3G Trans MOSFET P-CH 30V 70A 3-Pin TO-252 T/R (Alt: IPD042P03L3 G)
IPD042P03L3GATMA1-CUT TAPE Nuevo y original
IPD042P03L3GXT Trans MOSFET P-CH 30V 70A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD042P03L3GBTMA1)
IPD042P03L3G 042P03L Nuevo y original
IPD042P03L3G(042P03L) Nuevo y original
IPD042P03L3GATMA1 , 2SD1 Nuevo y original
IPD042P03L3GBTMA1 , 2SD1 Nuevo y original
IPD042P03L3GS Nuevo y original
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