IPB90N06S4L

IPB90N06S4L04ATMA2 vs IPB90N06S4L04ATMA1 vs IPB90N06S4L-04

 
PartNumberIPB90N06S4L04ATMA2IPB90N06S4L04ATMA1IPB90N06S4L-04
DescriptionMOSFET N-Ch 60V 90A D2PAK-2MOSFET N-CH 60V 90A TO263-3Darlington Transistors MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS-T2
ManufacturerInfineon-INF
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-263-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current90 A--
Rds On Drain Source Resistance3.4 mOhms--
ConfigurationSingle--
QualificationAEC-Q101--
PackagingReel-Reel
Height4.4 mm--
Length10 mm--
SeriesIPB90N06-OptiMOS-T2
Transistor Type1 N-Channel-1 N-Channel
Width9.25 mm--
BrandInfineon Technologies--
Product TypeMOSFET--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Part # AliasesIPB90N06S4L-04 IPB9N6S4L4XT SP001028756--
Unit Weight0.068654 oz-0.139332 oz
Part Aliases--IPB90N06S4L04ATMA1 IPB90N06S4L04ATMA2 IPB90N06S4L04XT SP001028756
Tradename--OptiMOS
Package Case--TO-252-3
Pd Power Dissipation--150 W
Maximum Operating Temperature--+ 175 C
Minimum Operating Temperature--- 55 C
Fall Time--20 ns
Rise Time--6 ns
Vgs Gate Source Voltage--16 V
Id Continuous Drain Current--90 A
Vds Drain Source Breakdown Voltage--60 V
Rds On Drain Source Resistance--3.4 mOhms
Typical Turn Off Delay Time--140 ns
Typical Turn On Delay Time--21 ns
Qg Gate Charge--133 nC
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IPB90N06S4L04ATMA2 MOSFET N-Ch 60V 90A D2PAK-2
Infineon Technologies
Infineon Technologies
IPB90N06S4L04ATMA2 MOSFET N-CH 60V 90A TO263-3
IPB90N06S4L04ATMA1 MOSFET N-CH 60V 90A TO263-3
IPB90N06S4L04ATMA2-CUT TAPE Nuevo y original
IPB90N06S4L-04 Darlington Transistors MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS-T2
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