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| PartNumber | IPB80N08S2-07 | IPB80N08S2L-07 | IPB80N08S207ATMA1 |
| Description | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS | MOSFET N-CHANNEL_75/80V |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 75 V | 75 V | - |
| Id Continuous Drain Current | 80 A | 80 A | - |
| Rds On Drain Source Resistance | 6.5 mOhms | 4.8 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 300 W | 300 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 30 ns | 22 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 50 ns | 55 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 61 ns | 85 ns | - |
| Typical Turn On Delay Time | 26 ns | 19 ns | - |
| Part # Aliases | IPB80N08S207ATMA1 IPB8N8S27XT SP000219048 | IPB80N08S2L07ATMA1 IPB8N8S2L7XT SP000219051 | IPB80N08S2-07 IPB8N8S27XT SP000219048 |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Vgs th Gate Source Threshold Voltage | - | 1.2 V | - |
| Qg Gate Charge | - | 233 nC | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB80N08S2-07 | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS | |
| IPB80N08S2L07ATMA1 | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS | ||
| IPB80N08S406ATMA1 | MOSFET N-CHANNEL 75/80V | ||
| IPB80N08S2L-07 | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS | ||
| IPB80N08S207ATMA1 | MOSFET N-CH 75V 80A TO263-3 | ||
| IPB80N08S2L07ATMA1 | MOSFET N-CH 75V 80A TO263-3 | ||
| IPB80N08S406ATMA1 | MOSFET N-CHANNEL 75/80V | ||
Infineon Technologies |
IPB80N08S207ATMA1 | MOSFET N-CHANNEL_75/80V | |
| IPB80N08S2-07 | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS | ||
| IPB80N08S207 | MOSFET, AEC-Q101, N-CH, 75V, TO-263 | ||
| IPB80N08S2L | Nuevo y original | ||
| IPB80N08S2L-07 | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS | ||
| IPB80N08S2L-07(2N0807 | Nuevo y original |