PartNumber | IPB80N08S2-07 | IPB80N08S2L-07 | IPB80N08S207ATMA1 |
Description | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS | MOSFET N-CHANNEL_75/80V |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 75 V | 75 V | - |
Id Continuous Drain Current | 80 A | 80 A | - |
Rds On Drain Source Resistance | 6.5 mOhms | 4.8 mOhms | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 300 W | 300 W | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | - |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Tradename | OptiMOS | OptiMOS | OptiMOS |
Packaging | Reel | Reel | Reel |
Height | 4.4 mm | 4.4 mm | 4.4 mm |
Length | 10 mm | 10 mm | 10 mm |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 9.25 mm | 9.25 mm | 9.25 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 30 ns | 22 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 50 ns | 55 ns | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 61 ns | 85 ns | - |
Typical Turn On Delay Time | 26 ns | 19 ns | - |
Part # Aliases | IPB80N08S207ATMA1 IPB8N8S27XT SP000219048 | IPB80N08S2L07ATMA1 IPB8N8S2L7XT SP000219051 | IPB80N08S2-07 IPB8N8S27XT SP000219048 |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Vgs th Gate Source Threshold Voltage | - | 1.2 V | - |
Qg Gate Charge | - | 233 nC | - |