 | |  | |
| PartNumber | IPB60R125C6 | IPB60R125C6ATMA1 | IPB60R125C6 6R125C6 |
| Description | MOSFET N-Ch 650V 30A D2PAK-2 CoolMOS C6 | MOSFET HIGH POWER_LEGACY | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 30 A | - | - |
| Rds On Drain Source Resistance | 125 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 96 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 219 W | - | - |
| Configuration | Single | Single | - |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Series | CoolMOS C6 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 7 nS | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 12 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 83 nS | - | - |
| Part # Aliases | IPB60R125C6ATMA1 IPB6R125C6XT SP000687456 | IPB60R125C6 IPB6R125C6XT SP000687456 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB60R125C6 | MOSFET N-Ch 650V 30A D2PAK-2 CoolMOS C6 | |
| IPB60R125C6ATMA1 | MOSFET N-CH 600V 30A TO263 | ||
Infineon Technologies |
IPB60R125C6ATMA1 | MOSFET HIGH POWER_LEGACY | |
| IPB60R125C6 | MOSFET N-Ch 650V 30A D2PAK-2 CoolMOS C6 | ||
| IPB60R125C6 6R125C6 | Nuevo y original | ||
| IPB60R125C6S | Nuevo y original |