 | | | |
| PartNumber | IPB180N10S4-02 | IPB180N10S402ATMA1 | IPB180N10S403ATMA1 |
| Description | MOSFET N-Ch 100V 180A D2PAK-6 | MOSFET N-Ch 100V 180A D2PAK-6 | MOSFET N-CHANNEL_100+ |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PG-TO-263-7 | PG-TO-263-7 | TO-263-7 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 180 A | 180 A | - |
| Rds On Drain Source Resistance | 2.5 mOhms | 2.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 10 V | 10 V | - |
| Qg Gate Charge | 156 nC | 156 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 300 W | 300 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | XPB180N10 | IPB180N10 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 40 ns | 40 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 9 ns | 9 ns | - |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 30 ns | 30 ns | - |
| Typical Turn On Delay Time | 15 ns | 15 ns | - |
| Part # Aliases | IPB180N10S402ATMA1 SP001057184 | IPB180N10S4-02 SP001057184 | IPB180N10S4-03 SP000915592 |
| Unit Weight | 0.056438 oz | 0.056438 oz | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB180N10S4-02 | MOSFET N-Ch 100V 180A D2PAK-6 | |
| IPB180N10S402ATMA1 | MOSFET N-Ch 100V 180A D2PAK-6 | ||
| IPB180N10S403ATMA1 | MOSFET N-CH TO263-7 | ||
| IPB180N10S402ATMA1 | RF Bipolar Transistors MOSFET N-Ch 100V 180A D2PAK-6 | ||
Infineon Technologies |
IPB180N10S403ATMA1 | MOSFET N-CHANNEL_100+ | |
| IPB180N10S4 | Nuevo y original | ||
| IPB180N10S4-02 | Trans MOSFET N-CH 100V 180A Automotive 7-Pin(6+Tab) TO-263 | ||
| IPB180N10S4-03 | Nuevo y original |