 |  | | |
| PartNumber | IPB180N03S4L-H0 | IPB180N03S4L-H0 (4N03LH | IPB180N03S4L-H0 (4N03LH0 |
| Description | MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS-T2 | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-7 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 180 A | - | - |
| Rds On Drain Source Resistance | 1.1 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 176 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 188 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS-T2 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 41 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 24 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 38 ns | - | - |
| Typical Turn On Delay Time | 35 ns | - | - |
| Part # Aliases | IPB180N03S4LH0ATMA1 IPB18N3S4LHXT SP000555050 | - | - |
| Unit Weight | 0.056438 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB180N03S4L-H0 | MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS-T2 | |
| IPB180N03S4L-H0 (4N03LH | Nuevo y original | ||
| IPB180N03S4L-H0 (4N03LH0 | Nuevo y original | ||
| IPB180N03S4L-H0 | Darlington Transistors MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS-T2 |