IPB100N04S4

IPB100N04S4-H2 vs IPB100N04S4-02D vs IPB100N04S4-02 4N0402

 
PartNumberIPB100N04S4-H2IPB100N04S4-02DIPB100N04S4-02 4N0402
DescriptionMOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T2MOSFET N-Ch 40V 100A D2PAK-2
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance2.1 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge90 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation115 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameOptiMOS--
PackagingReel--
Height4.4 mm--
Length10 mm--
SeriesOptiMOS-T2--
Transistor Type1 N-Channel--
Width9.25 mm--
BrandInfineon Technologies--
Fall Time21 ns--
Product TypeMOSFET--
Rise Time13 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time19 ns--
Typical Turn On Delay Time18 ns--
Part # AliasesIPB100N04S4H2ATMA1 IPB1N4S4H2XT SP000711274--
Unit Weight0.139332 oz--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IPB100N04S4H2ATMA1 MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T2
IPB100N04S4-H2 MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T2
IPB100N04S4H2ATMA1 MOSFET N-CH 40V 100A TO263-3-2
IPB100N04S4-02D MOSFET N-Ch 40V 100A D2PAK-2
IPB100N04S4-02 4N0402 Nuevo y original
IPB100N04S4-H2 4N04H2 Nuevo y original
IPB100N04S4H2ATMA1INFINE Nuevo y original
IPB100N04S4-H2 Darlington Transistors MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T2
IPB100N04S402DXTMA1 RF Bipolar Transistors MOSFET N-Ch 40V 100A D2PAK-2
Top