 | | |
| PartNumber | IPB100N04S2L03ATMA2 | IPB100N04S2L03ATMA1 |
| Description | MOSFET N-CHANNEL_30/40V | MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Configuration | Single | Single |
| Qualification | AEC-Q101 | - |
| Packaging | Reel | Reel |
| Height | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | IPB100N04S2L-03 SP001063640 | IPB100N04S2L-03 IPB100N04S2L03XT SP000219065 |
| Unit Weight | 0.139332 oz | 0.077603 oz |
| RoHS | - | Y |
| Vds Drain Source Breakdown Voltage | - | 40 V |
| Id Continuous Drain Current | - | 100 A |
| Rds On Drain Source Resistance | - | 2.1 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 1.2 V |
| Vgs Gate Source Voltage | - | 20 V |
| Qg Gate Charge | - | 230 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 175 C |
| Pd Power Dissipation | - | 300 W |
| Channel Mode | - | Enhancement |
| Series | - | XPB100N04 |
| Fall Time | - | 27 ns |
| Rise Time | - | 51 ns |
| Typical Turn Off Delay Time | - | 77 ns |
| Typical Turn On Delay Time | - | 19 ns |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB100N04S2L03ATMA2 | MOSFET N-CHANNEL_30/40V | |
| IPB100N04S2L03ATMA1 | MOSFET N-CH 40V 100A TO263-3 | ||
| IPB100N04S2L03ATMA2 | MOSFET N-CH 40V 100A TO263-3 | ||
Infineon Technologies |
IPB100N04S2L03ATMA1 | MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS | |
| IPB100N04S2L-03 | MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS |