 | |  | |
| PartNumber | IPB100N04S204ATMA4 | IPB100N04S2L03ATMA1 | IPB100N04S204ATMA1 |
| Description | MOSFET N-CHANNEL_30/40V | MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS | MOSFET N-CH 40V 100A TO263-3 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Configuration | Single | Single | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | IPB100N04S2-04 SP001058122 | IPB100N04S2L-03 IPB100N04S2L03XT SP000219065 | - |
| Unit Weight | 0.139332 oz | 0.077603 oz | - |
| RoHS | - | Y | - |
| Vds Drain Source Breakdown Voltage | - | 40 V | - |
| Id Continuous Drain Current | - | 100 A | - |
| Rds On Drain Source Resistance | - | 2.1 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 1.2 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 230 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 300 W | - |
| Channel Mode | - | Enhancement | - |
| Series | - | XPB100N04 | - |
| Fall Time | - | 27 ns | - |
| Rise Time | - | 51 ns | - |
| Typical Turn Off Delay Time | - | 77 ns | - |
| Typical Turn On Delay Time | - | 19 ns | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB100N04S204ATMA4 | MOSFET N-CHANNEL_30/40V | |
| IPB100N04S4H2ATMA1 | MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T2 | ||
| IPB100N04S4-H2 | MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T2 | ||
| IPB100N04S3-03 | MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T | ||
| IPB100N04S2L03ATMA2 | MOSFET N-CHANNEL_30/40V | ||
| IPB100N04S4H2ATMA1 | MOSFET N-CH 40V 100A TO263-3-2 | ||
| IPB100N04S303ATMA1 | MOSFET N-CH 40V 100A TO263-3 | ||
| IPB100N04S204ATMA4 | MOSFET N-CH 40V 100A TO263-3 | ||
| IPB100N04S204ATMA1 | MOSFET N-CH 40V 100A TO263-3 | ||
| IPB100N04S2L03ATMA1 | MOSFET N-CH 40V 100A TO263-3 | ||
| IPB100N04S2L03ATMA2 | MOSFET N-CH 40V 100A TO263-3 | ||
Infineon Technologies |
IPB100N04S2L03ATMA1 | MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS | |
| IPB100N04S303ATMA1 | MOSFET N-CHANNEL_30/40V | ||
| IPB100N04S4-02D | MOSFET N-Ch 40V 100A D2PAK-2 | ||
| IPB100N04S2L-03 | MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS | ||
| IPB100N04S3-03M | Nuevo y original | ||
| IPB100N04S4-02 4N0402 | Nuevo y original | ||
| IPB100N04S4-H2 4N04H2 | Nuevo y original | ||
| IPB100N04S4H2ATMA1INFINE | Nuevo y original | ||
| IPB100N04S4-H2 | Darlington Transistors MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T2 | ||
| IPB100N04S3-03 | IGBT Transistors MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T | ||
| IPB100N04S2-04 | RF Bipolar Transistors MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS | ||
| IPB100N04S402DXTMA1 | RF Bipolar Transistors MOSFET N-Ch 40V 100A D2PAK-2 |