 | | |
| PartNumber | IPB08CNE8N G | IPB08CN10N G |
| Description | MOSFET N-Ch 85V 95A D2PAK-2 | MOSFET N-Ch 100V 95A D2PAK-2 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 85 V | 100 V |
| Id Continuous Drain Current | 95 A | 95 A |
| Rds On Drain Source Resistance | 8.2 mOhms | 8.5 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 167 W | 167 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 6 ns | 6 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 24 ns | 24 ns |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 26 ns | 26 ns |
| Typical Turn On Delay Time | 15 ns | 15 ns |
| Part # Aliases | IPB08CNE8NGXT | IPB08CN10NGXT |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB08CNE8N G | MOSFET N-Ch 85V 95A D2PAK-2 | |
| IPB08CN10N G | MOSFET N-Ch 100V 95A D2PAK-2 | ||
Infineon Technologies |
IPB08CN10N G | MOSFET N-CH 100V 95A TO263-3 | |
| IPB08CNE8N G | MOSFET N-CH 85V 95A TO263-3 | ||
| IPB08CN10NG | Nuevo y original |