 | | | |
| PartNumber | IPB023N04N | IPB023N04NG | IPB023N04N G |
| Description | Power Field-Effect Transistor, 90A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | IGBT Transistors MOSFET N-Ch 40V 90A D2PAK-2 |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| IPB023N04N | Nuevo y original | ||
| IPB023N04NG | Power Field-Effect Transistor, 90A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB023N04NGS | Nuevo y original | ||
| IPB023N06N3 | Nuevo y original | ||
| IPB023N06N3G | 140 A, 60 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 | ||
| IPB023N06N3 G | IGBT Transistors MOSFET N-Ch 60V 140A D2PAK-6 | ||
| IPB023N04N G | IGBT Transistors MOSFET N-Ch 40V 90A D2PAK-2 | ||
Infineon Technologies |
IPB023N04NGATMA1 | MOSFET N-CH 40V 90A TO263-3 | |
| IPB023N06N3GATMA1 | MOSFET N-CH 60V 140A TO263-7 |