 |  | |
| PartNumber | IPB021N06N3G | IPB021N06N3GATMA1 |
| Description | Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | MOSFET N-CH 60V 120A TO263-3 |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| IPB021N06N3G | Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
Infineon Technologies |
IPB021N06N3GATMA1 | MOSFET N-CH 60V 120A TO263-3 |