IPA65R600C6

IPA65R600C6XKSA1 vs IPA65R600C6 2SK4101 vs IPA65R600C6

 
PartNumberIPA65R600C6XKSA1IPA65R600C6 2SK4101IPA65R600C6
DescriptionMOSFET N-Ch 700V 7.3A TO220FP-3 CoolMOS C6Darlington Transistors MOSFET N-Ch 700V 7.3A TO220FP-3 CoolMOS C6
ManufacturerInfineon-INFINEON
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-220FP-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current7.3 A--
Rds On Drain Source Resistance540 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge23 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation28 W--
ConfigurationSingle-Single
Channel ModeEnhancement--
TradenameCoolMOS-CoolMOS
PackagingTube-Tube
Height16.15 mm--
Length10.65 mm--
SeriesCoolMOS C6-CoolMOS C6
Transistor Type1 N-Channel-1 N-Channel
Width4.85 mm--
BrandInfineon Technologies--
Fall Time13 ns-13 ns
Product TypeMOSFET--
Rise Time9 ns-9 ns
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time80 ns-80 nS
Typical Turn On Delay Time12 ns--
Part # AliasesIPA65R600C6XKSA1 SP000850502--
Unit Weight0.211644 oz-0.211644 oz
Part Aliases--IPA65R600C6XK IPA65R600C6XKSA1 SP000850502
Package Case--TO-220-3
Pd Power Dissipation--28 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--7.3 A
Vds Drain Source Breakdown Voltage--700 V
Rds On Drain Source Resistance--600 mOhms
Qg Gate Charge--23 nC
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IPA65R600C6XKSA1 MOSFET N-Ch 700V 7.3A TO220FP-3 CoolMOS C6
IPA65R600C6 2SK4101 Nuevo y original
Infineon Technologies
Infineon Technologies
IPA65R600C6XKSA1 MOSFET N-CH 650V 7.3A TO220
IPA65R600C6 Darlington Transistors MOSFET N-Ch 700V 7.3A TO220FP-3 CoolMOS C6
Top