 | |  | |
| PartNumber | IPA65R095C7XKSA1 | IPA65R095C7 | IPA65R099C6XKSA1 |
| Description | MOSFET HIGH POWER BEST IN CLASS | MOSFET HIGH POWER BEST IN CLASS | RF Bipolar Transistors MOSFET N-Ch 700V 115A TO220FP-3 |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220FP-3 | TO-220FP-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Id Continuous Drain Current | 12 A | 12 A | - |
| Rds On Drain Source Resistance | 84 mOhms | 84 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 45 nC | 45 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 34 W | 34 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | CoolMOS | CoolMOS | CoolMOS |
| Packaging | Tube | Tube | Tube |
| Height | 16.15 mm | 16.15 mm | - |
| Length | 10.65 mm | 10.65 mm | - |
| Series | CoolMOS C7 | CoolMOS C7 | IPA65R099 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 4.85 mm | 4.85 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 7 ns | 7 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 12 ns | 12 ns | - |
| Factory Pack Quantity | 500 | 500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 60 ns | 60 ns | - |
| Typical Turn On Delay Time | 14 ns | 14 ns | - |
| Part # Aliases | IPA65R095C7 SP001080126 | IPA65R095C7XKSA1 SP001080126 | - |
| Unit Weight | 0.211644 oz | 0.068784 oz | 0.211644 oz |
| RoHS | - | Y | - |
| Part Aliases | - | - | IPA65R099C6 IPA65R099C6XK SP000895220 |
| Package Case | - | - | TO-220-3 |
| Id Continuous Drain Current | - | - | 115 A |
| Vds Drain Source Breakdown Voltage | - | - | 700 V |
| Rds On Drain Source Resistance | - | - | 99 mOhms |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPA65R095C7XKSA1 | MOSFET HIGH POWER BEST IN CLASS | |
| IPA65R095C7 | MOSFET HIGH POWER BEST IN CLASS | ||
| IPA65R095C7XKSA1 | MOSFET HIGH POWER BEST IN CLASS | ||
| IPA65R099C6XKSA1 | RF Bipolar Transistors MOSFET N-Ch 700V 115A TO220FP-3 | ||
| IPA65R095C7 | MOSFET HIGH POWER BEST IN CLASS | ||
| IPA65R099C6 | MOSFET N-Ch 700V 115A TO220FP-3 |