 |  | | |
| PartNumber | IPA032N06N3 G | IPA032N06N3 | IPA032N06N3G |
| Description | MOSFET N-Ch 60V 84A TO220FP-3 OptiMOS 3 | Power Field-Effect Transistor, 84A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | |
| Manufacturer | Infineon | Infineon Technologies | INFINEON |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220FP-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 84 A | - | - |
| Rds On Drain Source Resistance | 3.2 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 124 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 41 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Tube | Tube | - |
| Height | 16.15 mm | - | - |
| Length | 10.65 mm | - | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.85 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 135 S | - | - |
| Fall Time | 20 ns | 20 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 120 ns | 120 ns | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 62 ns | 62 ns | - |
| Typical Turn On Delay Time | 35 ns | 35 ns | - |
| Part # Aliases | IPA032N06N3GXKSA1 IPA32N6N3GXK SP000453608 | - | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | - |
| Part Aliases | - | IPA032N06N3GXK IPA032N06N3GXKSA1 SP000453608 | - |
| Package Case | - | TO-220-3 | - |
| Pd Power Dissipation | - | 41 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 84 A | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Rds On Drain Source Resistance | - | 3.2 mOhms | - |
| Qg Gate Charge | - | 124 nC | - |
| Forward Transconductance Min | - | 135 S | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IPA032N06N3 G | MOSFET N-Ch 60V 84A TO220FP-3 OptiMOS 3 | |
| IPA032N06N3GXKSA1 | MOSFET N-CH 60V 84A TO220-3-31 | ||
Infineon Technologies |
IPA032N06N3GXKSA1 | MOSFET MV POWER MOS | |
| IPA032N06N3GXK | Trans MOSFET N-CH 60V 84A 3-Pin(3+Tab) TO-220 Full-Pack - Rail/Tube (Alt: IPA032N06N3GXKSA1) | ||
| IPA032N06N3 | Nuevo y original | ||
| IPA032N06N3G | Power Field-Effect Transistor, 84A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IPA032N06N3 G | Darlington Transistors MOSFET N-Ch 60V 84A TO220FP-3 OptiMOS 3 |