IMT1AT108

IMT1AT108

 
PartNumberIMT1AT108
DescriptionBipolar Transistors - BJT TRANS GP BJT PNP 50V 0.15A 6PIN
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
RoHSY
Mounting StyleSMD/SMT
Package / CaseSMT-6
Transistor PolarityPNP
ConfigurationDual
Collector Emitter Voltage VCEO Max- 50 V
Collector Base Voltage VCBO- 60 V
Emitter Base Voltage VEBO- 6 V
Collector Emitter Saturation Voltage- 0.5 V
Maximum DC Collector Current0.15 A
Gain Bandwidth Product fT140 MHz
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
DC Current Gain hFE Max560
Height1.1 mm
Length2.9 mm
PackagingReel
Width1.6 mm
BrandROHM Semiconductor
Continuous Collector Current- 150 mA
DC Collector/Base Gain hfe Min120
Pd Power Dissipation300 mW
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
SubcategoryTransistors
Fabricante Parte # Descripción RFQ
IMT1AT108 Bipolar Transistors - BJT TRANS GP BJT PNP 50V 0.15A 6PIN
IMT1AT108 TRANS 2PNP 50V 0.15A 6SMT
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