PartNumber | IML3160AK | IML3160AK-TP | IML3160AK-TR |
Description | IGBT Transistors MOSFET 600V 1.5A N-Channel Power MOSFET | ||
Manufacturer | - | - | Exar Corporation |
Product Category | - | - | FETs - Single |
Series | - | - | - |
Packaging | - | - | Digi-ReelR Alternate Packaging |
Unit Weight | - | - | 0.008826 oz |
Mounting Style | - | - | SMD/SMT |
Tradename | - | - | INTEGRATED MEMORY LOGIC |
Package Case | - | - | TO-261-4, TO-261AA |
Technology | - | - | Si |
Operating Temperature | - | - | 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Number of Channels | - | - | 1 Channel |
Supplier Device Package | - | - | SOT-223 |
Configuration | - | - | Single |
FET Type | - | - | MOSFET N-Channel, Metal Oxide |
Power Max | - | - | 20W |
Transistor Type | - | - | 1 N-Channel |
Drain to Source Voltage Vdss | - | - | 600V |
Input Capacitance Ciss Vds | - | - | 170pF @ 25V |
FET Feature | - | - | - |
Current Continuous Drain Id 25°C | - | - | 1.5A (Tc) |
Rds On Max Id Vgs | - | - | 8 Ohm @ 750mA, 10V |
Vgs th Max Id | - | - | 4V @ 250μA |
Gate Charge Qg Vgs | - | - | 7.5nC @ 10V |
Pd Power Dissipation | - | - | 20 W |
Maximum Operating Temperature | - | - | + 85 C |
Minimum Operating Temperature | - | - | - 40 C |
Fall Time | - | - | 55 ns |
Rise Time | - | - | 30 ns |
Vgs Gate Source Voltage | - | - | 30 V |
Id Continuous Drain Current | - | - | 1.5 A |
Vds Drain Source Breakdown Voltage | - | - | 600 V |
Vgs th Gate Source Threshold Voltage | - | - | 4 V |
Rds On Drain Source Resistance | - | - | 7 Ohms |
Transistor Polarity | - | - | N-Channel |
Typical Turn Off Delay Time | - | - | 22 ns |
Typical Turn On Delay Time | - | - | 8 ns |
Qg Gate Charge | - | - | 7.5 nC |
Forward Transconductance Min | - | - | 1 S |
Channel Mode | - | - | Enhancement |