 | | | |
| PartNumber | IMB3A | IMB3A T110 | IMB3A T110 SOT163-B3 |
| Description | |||
| Manufacturer | Rohm Semiconductor | - | - |
| Product Category | Transistors (BJT) - Arrays, Pre-Biased | - | - |
| Series | IMB3A | - | - |
| Packaging | Tape & Reel (TR) | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | SC-74, SOT-457 | - | - |
| Mounting Type | Surface Mount | - | - |
| Supplier Device Package | SMT6 | - | - |
| Configuration | Dual | - | - |
| Power Max | 300mW | - | - |
| Transistor Type | 2 PNP - Pre-Biased (Dual) | - | - |
| Current Collector Ic Max | 100mA | - | - |
| Voltage Collector Emitter Breakdown Max | 50V | - | - |
| Resistor Base R1 Ohms | 4.7k | - | - |
| Resistor Emitter Base R2 Ohms | - | - | - |
| DC Current Gain hFE Min Ic Vce | 100 @ 1mA, 5V | - | - |
| Vce Saturation Max Ib Ic | 300mV @ 2.5mA, 5mA | - | - |
| Current Collector Cutoff Max | - | - | - |
| Frequency Transition | 250MHz | - | - |
| Pd Power Dissipation | 300 mW | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Collector Emitter Voltage VCEO Max | - 50 V | - | - |
| Transistor Polarity | PNP | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Continuous Collector Current | - 100 mA | - | - |
| DC Collector Base Gain hfe Min | 100 | - | - |
| Typical Input Resistor | 4.7 kOhms | - | - |
| Peak DC Collector Current | 100 mA | - | - |