| PartNumber | IKD10N60RATMA1 | IKD10N60RAATMA2 |
| Description | IGBT Transistors IGBT w/ INTG DIODE 600V 20A | IGBT Transistors IGBT PRODUCTS |
| Manufacturer | Infineon | Infineon |
| Product Category | IGBT Transistors | IGBT Transistors |
| RoHS | Y | - |
| Technology | Si | Si |
| Package / Case | TO-252-3 | TO-252-3 |
| Mounting Style | SMD/SMT | SMD/SMT |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V |
| Collector Emitter Saturation Voltage | 1.65 V | 1.65 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V |
| Continuous Collector Current at 25 C | 20 A | 20 A |
| Pd Power Dissipation | 150 W | 150 W |
| Minimum Operating Temperature | - 40 C | - 40 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Series | RC | RC |
| Packaging | Reel | Reel |
| Brand | Infineon Technologies | Infineon Technologies |
| Gate Emitter Leakage Current | 100 nA | 100 nA |
| Product Type | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | IGBTs | IGBTs |
| Tradename | TRENCHSTOP | TRENCHSTOP |
| Part # Aliases | IKD10N60R SP000964630 | IKD10N60RA SP001008648 |
| Unit Weight | 0.011760 oz | - |