IHW30N100

IHW30N100R vs IHW30N100 vs IHW30N100R H30R110

 
PartNumberIHW30N100RIHW30N100IHW30N100R H30R110
DescriptionIGBT Transistors REVERSE CONDUCT IGBT 1000V 30A
ManufacturerInfineonInfineon Technologies-
Product CategoryIGBT TransistorsIC Chips-
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1 kV--
Collector Emitter Saturation Voltage1.75 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C30 A--
Pd Power Dissipation412 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTubeTube-
Continuous Collector Current Ic Max60 A--
Height21 mm--
Length15.8 mm--
Width5 mm--
BrandInfineon Technologies--
Product TypeIGBT Transistors--
Factory Pack Quantity240--
SubcategoryIGBTs--
Part # AliasesIHW30N100RXK SP000212224--
Unit Weight1.340411 oz--
Series---
Package Case-TO-247-3-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-PG-TO247-3-
Power Max-412W-
Reverse Recovery Time trr---
Current Collector Ic Max-60A-
Voltage Collector Emitter Breakdown Max-1000V-
IGBT Type-Trench Field Stop-
Current Collector Pulsed Icm-90A-
Vce on Max Vge Ic-1.7V @ 15V, 30A-
Switching Energy-2.1mJ (off)-
Gate Charge-209nC-
Td on off 25°C--/846ns-
Test Condition-600V, 30A, 26 Ohm, 15V-
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IHW30N100TFKSA1 IGBT Transistors LOW LOSS DuoPack 1000V 30A
IHW30N100R IGBT Transistors REVERSE CONDUCT IGBT 1000V 30A
IHW30N100 Nuevo y original
IHW30N100R H30R110 Nuevo y original
IHW30N100T IGBT Transistors LOW LOSS DuoPack 1000V 30A
Infineon Technologies
Infineon Technologies
IHW30N100R IGBT 1000V 60A 412W TO247-3
IHW30N100TFKSA1 IGBT 1000V 60A 412W TO247-3
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