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| PartNumber | IDW30G65C5XKSA1 | IDW30G65C5 | IDW30G65C5FKSA1 |
| Description | Schottky Diodes & Rectifiers SIC DIODES | Schottky Diodes & Rectifiers SIC DIODES | Schottky Diodes & Rectifiers SIC DIODES |
| Manufacturer | Infineon | INFINEON | Infineon Technologies |
| Product Category | Schottky Diodes & Rectifiers | Diodes, Rectifiers - Single | Diodes, Rectifiers - Single |
| RoHS | Y | - | - |
| Product | Schottky Silicon Carbide Diodes | Schottky Silicon Carbide Diodes | Schottky Silicon Carbide Diodes |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | - | - |
| If Forward Current | 30 A | - | - |
| Vrrm Repetitive Reverse Voltage | 650 V | - | - |
| Vf Forward Voltage | 1.5 V | - | - |
| Ifsm Forward Surge Current | 165 A | - | - |
| Configuration | Single | Single | - |
| Technology | SiC | SiC | SiC |
| Ir Reverse Current | 1.6 uA | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Series | CoolSiC | thinQ! | IDW30G65 |
| Packaging | Tube | Tube | Tube |
| Brand | Infineon Technologies | - | - |
| Pd Power Dissipation | 150 W | - | - |
| Product Type | Schottky Diodes & Rectifiers | - | - |
| Factory Pack Quantity | 240 | - | - |
| Subcategory | Diodes & Rectifiers | - | - |
| Tradename | CoolSiC | - | - |
| Vr Reverse Voltage | 650 V | - | - |
| Part # Aliases | IDW30G65C5 SP001632892 | - | - |
| Unit Weight | 0.211644 oz | 1.340411 oz | 1.340411 oz |
| Part Aliases | - | IDW30G65C5FKSA1 IDW30G65C5XK SP000937052 | IDW30G65C5 IDW30G65C5XK SP000937052 |
| Package Case | - | TO-247-3 | TO-247-3 |
| Mounting Type | - | Through Hole | - |
| Supplier Device Package | - | PG-TO247-3 | - |
| Speed | - | No Recovery Time > 500mA (Io) | - |
| Diode Type | - | Silicon Carbide Schottky | - |
| Current Reverse Leakage Vr | - | 1.1mA @ 650V | - |
| Voltage Forward Vf Max If | - | 1.7V @ 30A | - |
| Voltage DC Reverse Vr Max | - | 650V | - |
| Current Average Rectified Io | - | 30A (DC) | - |
| Reverse Recovery Time trr | - | 0ns | - |
| Capacitance Vr F | - | 860pF @ 1V, 1MHz | - |
| Operating Temperature Junction | - | -55°C ~ 175°C | - |
| Pd Power Dissipation | - | 150 W | 150 W |
| Vf Forward Voltage | - | 1.5 V | - |
| Vr Reverse Voltage | - | 650 V | - |
| Ir Reverse Current | - | 220 uA | - |
| If Forward Current | - | 30 A | 30 A |
| Vrrm Repetitive Reverse Voltage | - | 650 V | 650 V |
| Ifsm Forward Surge Current | - | 165 A | 165 A |
| trr Reverse Recovery time | - | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IDW30G65C5XKSA1 | Schottky Diodes & Rectifiers SIC DIODES | |
| IDW30G65C5XKSA1 | DIODE SCHOTTKY 650V 30A TO247-3 | ||
| IDW30G65C5FKSA1 | Schottky Diodes & Rectifiers SIC DIODES | ||
| IDW30G65C5 | Schottky Diodes & Rectifiers SIC DIODES |