 |  |  | |
| PartNumber | IDH09G65C5XKSA2 | IDH09G65C5 | IDH09G65C5XKSA1 |
| Description | Schottky Diodes & Rectifiers SIC DIODES | Schottky Diodes & Rectifiers SIC DIODES | Schottky Diodes & Rectifiers SIC DIODES |
| Manufacturer | Infineon | Infineon Technologies | Infineon Technologies |
| Product Category | Schottky Diodes & Rectifiers | Diodes, Rectifiers - Single | Diodes, Rectifiers - Single |
| RoHS | Y | - | - |
| Product | Schottky Silicon Carbide Diodes | Schottky Silicon Carbide Diodes | Schottky Silicon Carbide Diodes |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-2 | - | - |
| If Forward Current | 9 A | - | - |
| Vrrm Repetitive Reverse Voltage | 650 V | - | - |
| Vf Forward Voltage | 1.5 V | - | - |
| Ifsm Forward Surge Current | 75 A | - | - |
| Configuration | Single | Single | - |
| Technology | SiC | SiC | SiC |
| Ir Reverse Current | 0.45 uA | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Packaging | Tube | Tube | Tube |
| Brand | Infineon Technologies | - | - |
| Pd Power Dissipation | 82 W | - | - |
| Product Type | Schottky Diodes & Rectifiers | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | Diodes & Rectifiers | - | - |
| Tradename | CoolSiC | - | - |
| Vr Reverse Voltage | 650 V | - | - |
| Part # Aliases | IDH09G65C5 SP001633154 | - | - |
| Unit Weight | 0.070548 oz | 0.211644 oz | 0.211644 oz |
| Series | - | thinQ! | IDH09G65 |
| Part Aliases | - | IDH09G65C5XK IDH09G65C5XKSA1 SP000925206 | IDH09G65C5 IDH09G65C5XK SP000925206 |
| Package Case | - | TO-220-2 | TO-220-2 |
| Mounting Type | - | Through Hole | - |
| Supplier Device Package | - | PG-TO220-2 | - |
| Speed | - | No Recovery Time > 500mA (Io) | - |
| Diode Type | - | Silicon Carbide Schottky | - |
| Current Reverse Leakage Vr | - | 310μA @ 650V | - |
| Voltage Forward Vf Max If | - | 1.7V @ 9A | - |
| Voltage DC Reverse Vr Max | - | 650V | - |
| Current Average Rectified Io | - | 9A (DC) | - |
| Reverse Recovery Time trr | - | 0ns | - |
| Capacitance Vr F | - | 270pF @ 1V, 1MHz | - |
| Operating Temperature Junction | - | -55°C ~ 175°C | - |
| Pd Power Dissipation | - | 82 W | 82 W |
| Vf Forward Voltage | - | 1.5 V | - |
| Vr Reverse Voltage | - | 650 V | - |
| Ir Reverse Current | - | 160 uA | - |
| If Forward Current | - | 9 A | 9 A |
| Vrrm Repetitive Reverse Voltage | - | 650 V | 650 V |
| Ifsm Forward Surge Current | - | 75 A | 75 A |
| trr Reverse Recovery time | - | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IDH09G65C5XKSA2 | Schottky Diodes & Rectifiers SIC DIODES | |
| IDH09G65C5XKSA2 | DIODE SCHOTTKY 650V 9A TO220-2-1 | ||
| IDH09G65C5XKSA1 | Schottky Diodes & Rectifiers SIC DIODES | ||
| IDH09G65C5 | Schottky Diodes & Rectifiers SIC DIODES |